The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
May. 24, 2023
Navitas Semiconductor Limited, Dublin, IE;
Songming Zhou, Shanghai, CN;
Tao Liu, San Marino, CA (US);
Navitas Semiconductor Limited, Dublin, IE;
Abstract
Gallium nitride reference voltage generation circuits. In one aspect, the circuit includes a first gallium nitride (GaN)-based transistor having a first gate terminal, a first source terminal and a first drain terminal, a second GaN-based transistor having a second gate terminal, a second source terminal and a second drain terminal, the second gate terminal coupled to the first drain terminal, an input terminal coupled to the first gate terminal and arranged to receive a first voltage, an output terminal coupled to the second source terminal, a power supply terminal coupled to the first drain terminal and the second drain terminal, and a feedback circuit coupled between the first source terminal and the second source terminal, where the first source terminal is coupled to a ground through a first impedance element, the first impedance element having a positive temperature coefficient.