The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Mar. 18, 2021
Applicant:

Nissan Chemical Corporation, Tokyo, JP;

Inventors:

Hiroto Ogata, Toyama, JP;

Tomotada Hirohara, Toyama, JP;

Hirokazu Nishimaki, Toyama, JP;

Makoto Nakajima, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); C08G 63/20 (2006.01); C09D 167/03 (2006.01); G03F 7/09 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08G 63/20 (2013.01); C09D 167/03 (2013.01); H10P 76/2041 (2026.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/20 (2013.01); G03F 7/26 (2013.01);
Abstract

A composition for forming a resist underlayer film which enables to form a flat film with a favorable coating even on a so-called stepped substrate and a small film thickness difference after embedding, and also a polymer as an important component of the composition for forming a resist underlayer film, a resist underlayer film formed using the composition for forming a resist underlayer film, and a method of producing a semiconductor device. The composition for forming a resist underlayer film, includes a compound of the following Formula (1) and a solvent: (wherein, Ar, Ar, Arand Arare each independently a substitutable monovalent aromatic hydrocarbon group, a, b, c, and d are each 0 or 1, and a+b+c+d=1).


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