The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Oct. 24, 2023
United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);
Kevin L. Denis, Greenbelt, MD (US);
Douglas M. Rabin, Greenbelt, MD (US);
Adrian N. Daw, Greenbelt, MD (US);
Jacob Parker, Greenbelt, MD (US);
United States of America as represented by the Administrator of NASA, Washington, DC (US);
Abstract
Fabrication of a binary-phase photon sieve begins with the deposition of a layer of a material on a substrate. The layer does not exceed 0.5 microns in thickness and has an optical energy transmittance of at least 30% in the extreme ultraviolet (EUV) wavelength spectrum. The first face of the layer is exposed and a second face of the layer is adhered to the substrate. A set of holes is generated through the layer of the material. An etch-resistant cover is attached to the layer of the material with the set of holes. A portion of the substrate is then etched to expose a portion of the second face of the layer of the material with the set of holes, while a remainder of the substrate remains intact. The etch-resistant cover is then removed.