The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jun. 07, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minjae Kang, Suwon-si, KR;
Yeonggil Kim, Suwon-si, KR;
Wookyung You, Suwon-si, KR;
Woojin Lee, Suwon-si, KR;
Jayeong Heo, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Disclosed is a semiconductor device including a substrate, conductive structures on the substrate and extending in parallel to each other in a first direction, and a first interlayer dielectric layer in first and second trenches between the conductive structures. A width in a second direction of the first trench may be less than a width in the second direction of the second trench. The first interlayer dielectric layer may include a lower interlayer dielectric layer and an upper interlayer dielectric layer on the lower interlayer dielectric layer, sequentially stacked. A mechanical strength of the upper interlayer dielectric layer may be greater than a mechanical strength of the lower interlayer dielectric layer.