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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12721149 B1

PDFFull Text
Date of Patent:
Aug. 25, 2026

Filed:

Mar. 06, 2023

Nonvolatile memory device and system comprising the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jung Tae Sung, Suwon-si, KR;

Yun Sun Jang, Suwon-si, KR;

Moo Rym Choi, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Christine S Kim

Assistant Examiner:

Tyler J Wiegand

Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A nonvolatile memory device includes a plurality of metal lines extending in a first direction and stacked in a second direction crossing the first direction, a plurality of cell structures passing through the plurality of metal lines and extending in the second direction, a plurality of extension regions, a plate common source line contact connected with a common source line, extending in the first direction, and formed in least two of the plurality of extension regions that are not formed with the plurality of cell structures, and input/output metal contacts connected with an external connection pad, extending in the first direction, and formed with at least two of the plurality of extension regions that are not formed with the plate common source line contact.

Find Patent Forward Citations

Sung, Jung. (2026). Nonvolatile memory device and system comprising the same (U.S. Patent No. 12721149). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12721149

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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