The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Mar. 16, 2023
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Seungju Chun, Gyeonggi-do, KR;

Changwan Lee, Daejeon, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H10P 14/60 (2026.01); H10W 10/00 (2026.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10W 10/014 (2026.01); C23C 16/4554 (2013.01); H01J 37/32449 (2013.01); H10P 14/6336 (2026.01); H10P 14/6339 (2026.01); H10W 10/17 (2026.01); H01J 37/32082 (2013.01); H01J 37/32834 (2013.01); H01J 2237/332 (2013.01);
Abstract

Disclosed is a method of processing a substrate, including: providing the substrate into a reaction space, the substrate comprising a gap having a predetermined cross-sectional area and a depth, performing a first sub-cycle step for depositing a gap-filling material by a predetermined thickness along a surface of the gap by an atomic layer deposition method, performing a second sub-cycle step for forming a deposition inhibiting region in an upper region of the gap using a deposition inhibitor and repeating a super-cycle such that a cross-sectional area of an inlet region of the gap remains greater than that of a lower region thereof located below the inlet region, the super-cycle comprising at least one the first sub-cycle and at least one the second sub-cycle, wherein the gap is filled without an occurrence of a void in the gap. Further, a substrate processing method for controlling a position of the void in the gap using the disclosed method above is disclosed.


Find Patent Forward Citations

Loading…