The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jan. 05, 2024
Applicant:

Seoul National University R&db Foundation, Seoul, KR;

Inventor:

Woo Young Choi, Seoul, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/20 (2026.01); H10P 14/43 (2026.01); H10P 50/28 (2026.01); H10P 72/00 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10P 14/3411 (2026.01); H10P 14/43 (2026.01); H10P 50/283 (2026.01); H10P 72/0438 (2026.01); H10W 20/056 (2026.01);
Abstract

A vacuum packaging manufacturing method includes forming, on a silicon wafer, a lower layer including a first metal layer and a second metal layer formed on the first metal layer, forming anchor regions by etching parts of the second metal layer and depositing a dielectric layer on the second metal layer in which the anchor regions are formed, exposing a silicon oxide film by removing a partial region of the dielectric layer and removing silicon oxide inside the second metal layer covered by the dielectric layer through the removed partial region of the dielectric layer, and depositing an upper layer on the second metal layer and forming a third metal structure on the upper layer, wherein, as the upper layer is deposited on the second metal layer, a region from which the silicon oxide inside the second metal layer is removed is in a vacuum or subvacuum state.


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