The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
May. 17, 2022
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite Paris-saclay, Gif sur Yvette, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Gilles Gaudin, Corenc, FR;
Ioan Mihai Miron, Grenoble, FR;
Olivier Boulle, Grenoble, FR;
Dafine Ravelosona, Villiers le Bacle, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Université Paris-Saclay, Gif-sur-yvette, FR;
Commissariat à l'Energie Atomique et aux Énergies Alternatives, Paris, FR;
Abstract
A method for fabricating an asymmetric SOT-MRAM memory cell unit, the memory cell unit including a conductor track and a pad, arranged on the conductor track and including at least one first magnetic region with free magnetization. The method further includes producing a stack of a plurality of extended layers, including at least one first extended magnetic layer; depositing a mask on an upper surface of the stack; and defining the first magnetic region in the first extended magnetic layer though ion irradiation of the upper surface of the stack carrying the mask, the parameters of the ion irradiation being adapted so as to modify magnetic properties of the material forming the first magnetic layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile