The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Aug. 03, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing a magnetic memory device may include forming a bottom electrode layer on a substrate; forming a block structure on the bottom electrode layer; performing a first deposition process on the bottom electrode layer to form a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer on the bottom electrode layer; performing a second deposition process on the free magnetic layer to form a capping layer on the free magnetic layer; and performing an etching process after forming a hard mask on the capping layer to form magnetic tunnel junction patterns. The first deposition process may include irradiating a first beam toward the substrate. The second deposition process may include irradiating a second beam toward the substrate. The second beam may have a greater angle than the first beam with respect to a normal line perpendicular to an upper surface of the substrate.