The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Oct. 26, 2023
Taiwan-asia Semiconductor Corporation, Hsinchu City, TW;
Chuan-Wei Chen, Hsinchu City, TW;
Yen-Chun Tseng, Hsinchu City, TW;
TAIWAN-ASIA SEMICONDUCTOR CORPORATION, Hsinchu City, TW;
Abstract
The present disclosure provides a structure of an ultraviolet light sensing-enhanced photodiode. The main structure of the photodiode includes a silicon photodiode and an infrared conversion layer formed on a surface that receives an ultraviolet light of the of the silicon photodiode. When the ultraviolet light irradiates on the ultraviolet light sensing-enhanced photodiode through the infrared conversion layer, the infrared conversion layer converts the ultraviolet light into an infrared light. The first portion of the infrared light is propagated to the silicon photodiode and then converted to a photoelectric current. The second portion of the infrared light is absorbed by the infrared conversion layer. An infrared reflection layer is also provided for reflecting the third portion of the infrared light that is originally escaped from the infrared reflection layer, and the third portion of the infrared light can be reflected into the silicon photodiode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile