The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Dec. 22, 2022
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Li Xiao, Beijing, CN;

Haoliang Zheng, Beijing, CN;

Minghua Xuan, Beijing, CN;

Jiao Zhao, Beijing, CN;

Yuzhen Guo, Beijing, CN;

Xiaorong Cui, Beijing, CN;

Chenyang Zhang, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10W 90/00 (2026.01); G09G 3/32 (2016.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 86/441 (2025.01); H10W 90/00 (2026.01); G09G 3/2074 (2013.01); G09G 3/32 (2013.01); G09G 2300/0452 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0852 (2013.01); G09G 2300/0861 (2013.01); G09G 2320/0247 (2013.01); H10D 86/481 (2025.01);
Abstract

A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes a plurality of circuit units (Q), the plurality of circuit units (Q) includes at least a first circuit unit (Q), a second circuit unit (Q) and a third circuit unit (Q), wherein the first circuit unit (Q) includes at least a first drive transistor (DTFT), the second circuit unit (Q) includes at least a second drive transistor (DTFT), the third circuit unit (Q) includes at least a third drive transistor (DTFT), the channel width of the first drive transistor (DTFT) is larger than that of the second drive transistor (DTFT) or the third drive transistor (DTFT), and the channel length of the first drive transistor (DTFT) is the same as that of the second drive transistor (DTFT) or the third drive transistor (DTFT).


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