The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Sep. 27, 2023
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;

Inventors:

Fei AI, Wuhan, CN;

Zhuang Li, Wuhan, CN;

Wenhui Xiong, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 86/40 (2025.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 86/421 (2025.01);
Abstract

A semiconductor device and a display panel are disclosed. The semiconductor device includes an insulating substrate and a thin film transistor on the insulating substrate. The thin film transistor includes a protrusion and an active layer. The protrusion includes a first sub-protrusion on the insulating substrate, and a second sub-protrusion on the first sub-protrusion. The second sub-protrusion completely covers a side of the first sub-protrusion away from the insulating substrate. The active layer includes a first ohmic contact portion, a channel portion connected to the first ohmic contact portion, and a second ohmic contact portion connected to the channel portion. The first ohmic contact portion is at least partially disposed on the insulating substrate. The channel portion is fitted to a side surface of the first sub-protrusion and a side surface of the second sub-protrusion.


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