The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Sep. 19, 2023
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventor:

Guillaume Alexandre Blin, Carlisle, MA (US);

Assignee:

SKYWORKS SOLUTIONS, INC., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 30/47 (2025.01); H10D 30/60 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/85 (2025.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); H10D 30/475 (2025.01); H10D 30/4755 (2025.01); H10D 30/603 (2025.01); H10D 30/65 (2025.01); H10D 62/126 (2025.01); H10D 62/154 (2025.01); H10D 62/158 (2025.01); H10D 62/8503 (2025.01); H10D 64/257 (2025.01); H10D 64/411 (2025.01); H10D 64/519 (2025.01); H10D 84/834 (2025.01);
Abstract

A transistor comprising a first drain region, a first source region disposed on a first side of the first drain region, a first active region being formed between the first drain region and the first source region, a second source region disposed on a second side of the first drain region opposite the first side, a second active region being formed between the first drain region and the second source region, the first active region having a different width than the second active region, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.


Find Patent Forward Citations

Blin, Guillaume. (2026). Wide bandgap transistor layout with unequal gate electrode finger widths (U.S. Patent No. 12720842). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12720842

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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