The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Aug. 04, 2023
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Johji Nishio, Tokyo, JP;

Tatsuo Shimizu, Tokyo, JP;

Chiharu Ota, Kawasaki, JP;

Ryosuke Iijima, Tokyo, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Kawasaki Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H10D 30/66 (2025.01); H10D 62/17 (2025.01); H10D 62/832 (2025.01); H10P 30/20 (2026.01);
U.S. Cl.
CPC ...
H10D 62/393 (2025.01); H10D 30/66 (2025.01); H10D 62/8325 (2025.01); H10P 30/2042 (2026.01); H10P 30/21 (2026.01);
Abstract

According to one embodiment, a semiconductor device includes a base, a first silicon carbide region, and a second silicon carbide region. The first silicon carbide region includes at least one selected from the group consisting of nitrogen, phosphorus and arsenic. The second silicon carbide region includes at least one selected from the group consisting of boron, aluminum and gallium. The first silicon carbide region is provided between the base and the second silicon carbide region. At least a part of the first silicon carbide region includes fluorine.


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