The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Nov. 02, 2023
Mitsubishi Electric Corporation, Tokyo, JP;
Tatsuo Harada, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A trench gate type semiconductor device is provided with an active region that is a region where an n-type emitter layer is provided adjacent to a trench and a thinned region that is a region where the n-type emitter layer is not provided adjacent to the trench. In the active region, a first n-type carrier accumulation layer is provided as a carrier accumulation layer. In the thinned region, a second n-type carrier accumulation layer having a lower impurity concentration than the first n-type carrier accumulation layer is provided as the carrier accumulation layer. A p-type contact layer in the thinned region has a portion in contact with an emitter electrode.