The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Aug. 15, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Takuya Yasutake, Kanazawa Ishikawa, JP;
Yasunobu Saito, Tokyo, JP;
Tsuyoshi Kachi, Kanazawa Ishikawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
A semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a third electrode, a second semiconductor layer, a third semiconductor layer, a fourth electrode, and a fourth semiconductor layer. The third semiconductor layer extends from the second semiconductor layer toward the first electrode side. A lower end of the third semiconductor layer at the first electrode side is positioned further toward the first electrode side than the lower surface of the second semiconductor layer and is separated from the insulating body. The third semiconductor layer is of the second conductivity type. The fourth electrode faces the second semiconductor layer via an other portion of the insulating body. The fourth semiconductor layer is located between the second semiconductor layer and the second electrode and electrically connected with the second electrode. The fourth semiconductor layer is of the first conductivity type.