The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Feb. 17, 2023
Hon Young Semiconductor Corporation, Hsinchu City, TW;
Hon Young Semiconductor Corporation, Hsinchu City, TW;
Abstract
The present disclosure provides a semiconductor device including a drift layer above the substrate, a source/drain region above the drift layer, an oxide thin film on the source/drain region, a contact on the oxide thin film, and a gate structure adjacent to source/drain region. The oxide thin film directly contacts the top surface of the source/drain region and the bottom surface of the contact. The source/drain region includes a first doping region having a first conductive type and a second doping region having a second conductive type different from the first conductive type, in which the first doping region and the second doping region forms the top surface of the source/drain region. The conduction band energy level of the oxide thin film is lower than the conduction band energy level of the first doping region.