The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Oct. 06, 2025
Applicant:

Zinite Corporation, Edmonton, CA;

Inventors:

Douglas Barlage, Edmonton, CA;

Gem Shoute, Edmonton, CA;

Assignee:

Zinite Corporation, Edmonton, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6737 (2025.01); H10D 30/6755 (2025.01); H10D 64/251 (2025.01);
Abstract

An example thin-film transistor includes a source including a body of source material, a drain including a body of drain material, a gate, and a body of semiconductor channel material between the source and the drain. The body of semiconductor channel material includes a metal oxide. The thin-film transistor further includes a source-channel interface between the body of source material and the body of semiconductor channel material. The source-channel interface includes a nitrogen-containing metal oxide. A similar or identical drain-channel interface may be provided. The nitrogen-containing metal oxide may be formed using plasma.


Find Patent Forward Citations

Barlage, Douglas. (2026). Source/drain channel interface with nitrogen-containing oxide (U.S. Patent No. 12720808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12720808

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…