The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Nov. 08, 2021
International Business Machines Corporation, Armonk, NY (US);
Sung Dae Suk, Watervliet, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Tze-Chiang Chen, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Double gate/gate-all-around and variable threshold voltage MOSFET devices and techniques for fabrication thereof in a single backside process are provided. In one aspect, a MOSFET device includes: a channel in between source/drain regions; at least one first gate disposed on a first side of the channel at a frontside of the MOSFET device; gate spacers offsetting the source/drain regions from the at least one first gate; and at least one second gate disposed on a second side of the channel directly opposite the at least one first gate at a backside of the MOSFET device. At least one gate contact can be present in direct contact with the at least one first gate and the at least one second gate. A method of forming a MOSFET device is also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile