The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Dec. 09, 2022
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Bastien Giraud, Grenoble Cedex, FR;

François Andrieu, Grenoble Cedex, FR;

Yasser Moursy, Grenoble Cedex, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H03K 17/687 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); G11C 13/003 (2013.01); H03K 17/687 (2013.01); G11C 2213/79 (2013.01);
Abstract

An FDSOI transistor control device includes a plurality of first wells having a first type of conductivity, each first well being associated with a group of transistors, and at least one second well having a second type of conductivity, formed under and around the first wells (). A bias circuit is configured to apply at least one first bias voltage to the first wells and at least one second bias voltage to at least one second well. All of the transistors may have the second type of conductivity.


Find Patent Forward Citations

Giraud, Bastien. (2026). Transistor control device and control method (U.S. Patent No. 12720767). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12720767

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…