The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Dec. 21, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Daehwan Choi, Suwon-si, KR;

Hyuk Kim, Suwon-si, KR;

Chanju Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02);
Abstract

A semiconductor device includes a cell array region, a contact region, a gate stack structure, a channel structure extending through the gate stack structurem, and gate contact portions connected to respective gate electrodes. At least some of the gate contact portions extend through a through gate electrode to a connection gate electrode. The gate contact portions include contact groups extending from a first side to a second side of the gate electrodes. Each of the electrode groups includes an upper group on a lower group. Each of the contact groups includes a first group connected to the upper group and a second group on the second side connected to the lower group, and a number of layers of the connection gate electrodes to which the gate contact portions are connected sequentially increases as a distance from a boundary between the first group and the second group increases.


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