The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jan. 19, 2023
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Kang Sik Choi, Seongnam-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10D 62/10 (2025.01); H10W 10/00 (2026.01); H10W 10/20 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10D 62/115 (2025.01); H10W 10/021 (2026.01); H10W 10/20 (2026.01); H10W 20/098 (2026.01);
Abstract
A manufacturing method of a semiconductor device is provided. The manufacturing method of the semiconductor device includes forming a sacrificial group including a layer above the doped semiconductor layer, forming a stack structure above the sacrificial group, forming a slit passing through the stack structure, forming a spacer insulating layer over a sidewall of the slit, forming a horizontal space by removing the sacrificial group through the slit, forming a semiconductor pattern over a surface of the horizontal space to define a gap in the horizontal space, and forming an impurity region in the semiconductor pattern.