The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Nov. 29, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Donghoon Kwon, Suwon-si, KR;

Chungki Min, Suwon-si, KR;

Boun Yoon, Suwon-si, KR;

Kihoon Jang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 16/04 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0483 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract

A semiconductor device includes a source structure, first and second stack structures, including first gate electrodes stacked on the source structure to be spaced apart from each other; a dummy structure on the source structure between the first and the second stack structures, and including second gate electrodes stacked to be spaced apart from each other; first separation regions passing through the first and second stack structures, and spaced apart from each other; second separation regions extending between each of the first and second stack structures and the dummy structure; channel structures passing through the first and second stack structures, and respectively including a channel layer, connected to the source structure through the channel layer; and first source contact structures passing through the dummy structure, and respectively including a first contact layer connected to the source structure through a lower surface of the first contact layer.


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