The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Oct. 23, 2023
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventors:

Chih-Wei Huang, Taoyuan City, TW;

Hsu-Cheng Fan, Taoyuan City, TW;

Chih-Yu Yen, New Taipei City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02);
Abstract

A memory device includes a semiconductor substrate having an active region, and a word line extending across the active region. The memory device also includes a first source/drain region and a second source/drain region disposed in the active region and on opposite sides of the word line. The memory device further includes a bit line contact disposed over and electrically connected to the first source/drain region. The bit line contact has a tapered profile. In addition, the memory device includes a capacitor contact disposed over and electrically connected to the second source/drain region.


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