The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

May. 05, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yangdoo Kim, Suwon-si, KR;

Dongwook Kim, Suwon-si, KR;

Sangwuk Park, Suwon-si, KR;

Minkyu Suh, Suwon-si, KR;

Geonyeop Lee, Suwon-si, KR;

Dokeun Lee, Suwon-si, KR;

Jungpyo Hong, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/0335 (2023.02);
Abstract

An integrated circuit (IC) device may include a conductive area on a substrate; a first electrode connected to the conductive area on the substrate, a width of the first electrode in a lateral direction gradually increasing toward the substrate; a second electrode on the substrate, the second electrode including a silicon germanium (SiGe) film, the SiGe film surrounding the first electrode; and a dielectric film between the first electrode and the second electrode. A content of a component of the SiGe film may vary according to a distance from the substrate.


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