The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jul. 05, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Hajime Kimura, Atsugi, JP;

Shunpei Yamazaki, Setagaya, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/041 (2006.01); G09G 3/32 (2016.01); G09G 3/36 (2006.01); H10K 59/35 (2023.01);
U.S. Cl.
CPC ...
H03K 17/04106 (2013.01); G09G 3/32 (2013.01); G09G 3/36 (2013.01); H10K 59/35 (2023.02);
Abstract

A semiconductor device with a high driving speed is provided. The semiconductor device includes first to third transistors and a first capacitor. One of a source and a drain of the third transistor is electrically connected to a gate of the second transistor, and the other of the source and the drain of the third transistor is electrically connected to a gate of the first transistor and a first terminal of the first capacitor. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, and the other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor and a second terminal of the first capacitor.


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