The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Apr. 27, 2023
Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Technology Development Co., Ltd., Beijing, CN;
Yifan Wu, Beijing, CN;
Yue Li, Beijing, CN;
Yuelei Xiao, Beijing, CN;
Qichang An, Beijing, CN;
Huiying Li, Beijing, CN;
Yingying Zhao, Beijing, CN;
Can Zhang, Beijing, CN;
Shuang Xu, Beijing, CN;
Kuili Ren, Beijing, CN;
Biqi Li, Beijing, CN;
Beijing BOE Optoelectronics Technology Co., Ltd., Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Beijing BOE Technology Development Co., Ltd., Beijing, CN;
Abstract
A filter, a method for manufacturing a filter and an electronic apparatus are provided. The present disclosure belongs to field of passive device technology. The filter includes a dielectric substrate, at least one inductor and at least one capacitor on the dielectric substrate. The filter further includes a first auxiliary functional layer on a side of the dielectric substrate away from the second conductive structure of the inductor, the first auxiliary functional layer includes first and second accommodating portions penetrating through the first auxiliary functional layer in a thickness direction thereof, the first plate of the capacitor fills in the first accommodating portion, the first conductive structure of the inductor fills in the second accommodating portion, and surfaces of the first plate and the first conductive structure away from the dielectric substrate are flush with a surface of the first auxiliary functional layer away from the dielectric substrate.