The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Dec. 29, 2021
Applicant:
Qorvo Us, Inc., Greensboro, NC (US);
Inventor:
Kevin Wesley Kobayashi, Redondo Beach, CA (US);
Assignee:
Qorvo US, Inc., Greensboro, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 1/32 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45183 (2013.01); H03F 1/3205 (2013.01); H03F 1/3211 (2013.01); H03F 2203/45134 (2013.01); H03F 2203/45238 (2013.01); H03F 2203/45498 (2013.01);
Abstract
A field effect transistor (FET) transconductance device with varying gate lengths is disclosed. In one aspect, the varying effective gate lengths are used in a differential architecture to obtain linear even and odd order operation simultaneously. In a particular aspect, the effective gate lengths may be varied according to a differential Multi-Tanh-like architecture. This variation of effective gate lengths enables a compact implementation particularly as compared to varying gate width or emitter areas while also providing linear even and odd order operation simultaneously.