The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Apr. 22, 2022
Applicant:

Freespace Photonics, Inc., Madison, WI (US);

Inventors:

Steven A. Jacobs, Madison, WI (US);

Robert A. Marsland, Madison, WI (US);

Assignee:

FreeSpace Photonics, Inc., Madison, WI (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/065 (2006.01); H01S 5/22 (2006.01); H01S 5/227 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0653 (2013.01); H01S 5/2206 (2013.01); H01S 5/227 (2013.01); H01S 5/3402 (2013.01); H01S 5/34313 (2013.01);
Abstract

A semiconductor laser including a waveguide having a core, a confinement layer to bury the core, and a metallization layer. The core includes an active core region. The confinement layer surrounds the core and includes a first confinement layer between the core and the semiconductor substrate below the core, a second confinement layer above the core, and a third confinement layer to either or both sides of the core. The metallization layer is located above the confinement layers and include a first metallization layer and a second metallization layer. The first metallization layer is in direct contact with the second confinement layer and the third confinement layer, while the second metallization layer is disposed above the first layer. The first metallization layer is tuned to have a plasmon resonance corresponding to a higher order mode with high loss.


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