The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jul. 10, 2023
Lam Research Corporation, Fremont, CA (US);
Advanced Energy Industries, Inc., Denver, CO (US);
Sanghyeon Park, Sunnyvale, CA (US);
Wei Liang, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Advanced Energy Industries, Inc., Denver, CO (US);
Abstract
A radiofrequency (RF) power amplifier for a plasma processing system includes a switching transistor having a drain terminal, a source terminal, and a gate. The source terminal is connected to a reference ground potential. The RF power amplifier includes a direct current power supply connected to the drain terminal of the switching transistor. The RF power amplifier includes an impedance matching network connected between the drain terminal of the switching transistor and a coil of the plasma processing system. The RF power amplifier includes an electrical parameter measurement device disposed to measure an electrical parameter related to the coil. The RF power amplifier includes a phase delay module that receives a switching feedback signal from the electrical parameter measurement device. The phase delay module applies a phase adjustment to the switching feedback signal to generate a switching control signal that is used to drive the gate of the switching transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile