Semiconductor memory device and operating method of the same

Abstract

A semiconductor memory device includes a substrate, first and second memory cell groups, a first word line connected to the first and second memory cell groups, and a control logic configured to cause the semiconductor memory device to apply a positive (+) erase voltage to the substrate, apply a positive (+) first program voltage to the first word line such that the first memory cell group has a first threshold voltage, apply a positive (+) first correction voltage to the first word line based on a determination that one or more first memory cells of the first memory cell group have respective threshold voltages smaller than the first verification voltage, and apply a negative (−) second correction voltage to the first word line based on a determination that one or more second memory cells of the first memory cell group have respective threshold voltages greater than the second verification voltage.