The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Oct. 31, 2022
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Lui Sakai, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Keizo Hiraga, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
Provided is a magnetoresistive effect memory that includes a magnetoresistive effect element. The magnetoresistive effect element provided in the magnetoresistive effect memory includes a voltage-controlled magnetic anisotropy effect layer (first magnetization free layer that is a magnetization free layer having a variable magnetization direction and has a voltage-controlled magnetic anisotropy effect, a non-voltage-controlled magnetic anisotropy effect layer (second magnetization free layer that is a magnetization free layer having a variable magnetization direction and has no voltage-controlled magnetic anisotropy effect, and a magnetization fixed layer that has a magnetic anisotropy and has an invariable magnetization direction.