The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Oct. 06, 2023
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventor:
Benjamin D. Briggs, Merrimack, NH (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 7/00 (2006.01); H10W 70/05 (2026.01); H10W 70/60 (2026.01); H10W 70/09 (2026.01); H10W 70/69 (2026.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 7/70375 (2013.01); G03F 7/70508 (2013.01); H10W 70/05 (2026.01); H10W 70/60 (2026.01); H10W 70/611 (2026.01); H10W 70/09 (2026.01); H10W 70/69 (2026.01);
Abstract
A semiconductor device may include a substrate. The semiconductor device may also include a dielectric material characterized, at least in part, by a dielectric constant. The semiconductor device may include a metallic pathway formed in the dielectric material. The semiconductor device may include a region about the metallic pathway of the semiconductor device may include a plurality of air gaps within the dielectric material and arranged three-dimensionally throughout the region, where the region may include a lower dielectric constant than the dielectric constant of the dielectric material.