The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

May. 30, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeongjin Lee, Suwon-si, KR;

Inbeom Yim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H10P 74/20 (2026.01); H10P 76/20 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
G03F 7/70633 (2013.01); G03F 7/70033 (2013.01); H10P 74/203 (2026.01); H10P 76/2041 (2026.01); H10P 76/4085 (2026.01);
Abstract

A method of correcting overlay includes forming first patterns in a plurality of first shot areas by radiating extreme ultraviolet light reflected from a first mask to a first layer; forming second patterns in each of a plurality of second shot areas by radiating extreme ultraviolet light reflected from a second mask to a second layer; matching a pair of second shot areas to each of the first shot areas; and generating first and second correction parameters for correcting an overlay error of the second patterns, wherein the first correction parameter is configured to correct an overlay error of each of the second shot areas based on the first shot area matched to each of the second shot areas, and the second correction parameter is configured to correct an overlay error between the pair of second shot areas matched to each of the first shot areas.


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