The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Apr. 04, 2022
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

Nikita Strelkov, Meylan, FR;

Andrey Timopheev, Vif, FR;

Jeffrey Childress, San Jose, CA (US);

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); G01R 33/12 (2006.01); H01F 10/32 (2006.01); H10N 50/10 (2023.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G01R 33/093 (2013.01); G01R 33/098 (2013.01); G01R 33/1284 (2013.01); H01F 10/3268 (2013.01); H10N 50/10 (2023.02); G11C 11/161 (2013.01);
Abstract

A method to calculate performance of a magnetic element including a reference bilayer including a ferromagnetic reference layer having a reference magnetization and an antiferromagnetic layer pining the reference magnetization by exchange-bias, the antiferromagnetic layer including a metallic polycrystalline material having a grain volume distribution; the method including: measuring an exchange-bias field (Hex) of the antiferromagnetic layer as a function of temperature; fitting a grain volume distribution function to the measured exchange-bias fields (Hex) to determine parameters characterizing the volume distribution function; calculating a variation in the direction of the reference magnetization as a function of a direction of an exposure magnetic field (H); and calculating the exchange bias field (Hex) for any value of the in-plane exposure field (H).


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