The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Mar. 06, 2024
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Dong Seuk Kim, Suwon-si, KR;

Geon Yong Lee, Suwon-si, KR;

Myung Duk Seo, Suwon-si, KR;

Dong Hwi Shin, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/64 (2020.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
G01R 31/64 (2020.01); H01G 4/012 (2013.01); H01G 4/1227 (2013.01); H01G 4/30 (2013.01);
Abstract

A method for measuring DC bias aging characteristics of a multilayer capacitor includes applying a first poling voltage to a multilayer capacitor including a body having a dielectric layer including a plurality of dielectric grains and an internal electrode disposed alternately with the dielectric layer in a first direction, and an external electrode disposed on the body, maintaining the first poling voltage for a first period of time (t), applying a DC bias voltage lower than the first poling voltage, maintaining the DC bias voltage for a second period of time (t), and measuring saturated capacitance after the DC bias voltage is applied.


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