The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Aug. 24, 2023
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventor:

Daniel Domes, Werl, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 25/18 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); H10W 40/00 (2026.01);
U.S. Cl.
CPC ...
G01N 25/18 (2013.01); G01R 31/2837 (2013.01); G01R 31/2601 (2013.01); G01R 31/2849 (2013.01); H10W 40/00 (2026.01);
Abstract

A method of monitoring a thermal impedance of at least a portion of a thermal path between a semiconductor device having at least two output terminals and a heat sink s provided. The method includes causing power dissipation in the semiconductor device by reloading parasitic capacitances of the semiconductor device such that the at least two output terminals are at the same voltage level, measuring a first temperature in response to the power dissipation at a first end of the portion of the thermal path, measuring a second temperature in response to the power dissipation at a second end of the portion of the thermal path, and determining a measure of the thermal impedance based on the first temperature and the second temperature.


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