The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Mar. 04, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yoshihisa Kagawa, Kanagawa, JP;

Takatoshi Kameshima, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G01N 21/17 (2006.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
G01N 21/17 (2013.01); H10D 86/00 (2025.01); G01N 2021/1765 (2013.01);
Abstract

Provided is a photodetection device capable of suppressing an increase in a parasitic capacitance of an electrode pad. A photodetection device includes: a first semiconductor layer that includes a photoelectric conversion unit and has one surface being a light incident surface and another surface being an element formation surface; an insulating layer laminated on a side of the light incident surface of the first semiconductor layer; an electrode pad exposed from a surface of the insulating layer on a side opposite to a surface on a side of the first semiconductor layer in a state where the insulating layer is interposed between the electrode pad and the first semiconductor layer; and an insulating ring that is a ring having an insulating property, penetrating the first semiconductor layer in a thickness direction, and surrounding the electrode pad in a plan view.


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