The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Nov. 22, 2024
Peking University, Beijing, CN;
Sinopatt Technology Co., Ltd., Dongguan, CN;
Xinqiang Wang, Beijing, CN;
Fang Liu, Beijing, CN;
Kai Kang, Beijing, CN;
Guoyi Zhang, Beijing, CN;
Tongjun Yu, Beijing, CN;
Ping Wang, Beijing, CN;
Zirong Wang, Beijing, CN;
Peking University, Beijing, CN;
Sinopatt Technology Co., Ltd., Dongguan, CN;
Abstract
A patterned aluminum nitride (AlN) composite substrate and a preparation method thereof are provided. A single crystal AlN with a semi-suspended AlN structure is prepared on a high temperature-resistant substrate. A non-suspended AlN of the single crystal AlN is covered by an optical medium material while a suspended AlN is exposed. A surface of the suspended AlN with a low dislocation density and a low mismatch stress and distributed periodically is used as a nucleation growth zone of a nitride semiconductor. An epitaxial interface is changed from an AlN/high temperature-resistant substrate into a homogeneous or nearly-homogeneous interface between the nitride semiconductor and the AlN. In this way, the patterned AlN composite substrate is obtained.