The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Dec. 16, 2020
Sunresin New Materials Co. Ltd., Shaanxi, CN;
SUNRESIN NEW MATERIALS CO. LTD., Shaanxi, CN;
Abstract
The present invention relates to an adsorbent resin for removing perfluorinated pollutants from a body of water, a preparation therefor and the use thereof. The objective is to solve the problem of traditional adsorbent materials, such as active carbon materials, having a poor effect in terms of removing perfluorooctanoic acid from water, being non-renewable, etc. In the present method, styrene and divinylbenzene are used as framework materials, a suitable pore-forming agent and a suitable dispersant are selected in order to prepare a macroporous resin with a moderate pore size, and an alkylation reaction is carried out at a low hindrance with p-xylylene dichloride (XDC) being used as a post-crosslinking agent, whereby a rigid benzene ring structure is introduced into the resin by means of post-crosslinking, thereby further increasing the hydrophobicity of the resin and increasing the crosslinking degree thereof; in addition, the micropore structure is adjusted in order to obtain an adsorbent resin with a narrow particle size distribution, a uniform pore size and a high specific surface area. The size of micropores in the resin is close to the molecular size of perfluorooctanoates in water, the adsorbate sieving capacity is strong, and the adsorption rate of perfluorinated compounds can be further improved.