The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Dec. 27, 2021
Applicant:

Tcl Technology Group Corporation, Huizhou, CN;

Inventors:

Likuan Zhou, Huizhou, CN;

Yixing Yang, Huizhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01G 9/02 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); H10K 50/16 (2023.01); H10K 71/40 (2023.01); H10K 85/10 (2023.01);
U.S. Cl.
CPC ...
C01G 9/02 (2013.01); H10K 50/16 (2023.02); H10K 85/1135 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H10K 71/40 (2023.02);
Abstract

A preparation method of quantum dot light emitting diode, including steps of: providing a prefabricated device, and forming zinc oxide nanomaterial on the prefabricated device, to prepare an electron transport layer; and performing heat treatment to the processed device, such that an amount of surface hydroxyl groups of the electron transport layer is 0.15-0.6. Through the heat treatment to the device provided with the electron transport layer, the amount of the surface hydroxyl groups of the electron transport layer is regulated, the fluorescence quenching effect of the surface hydroxyl groups of the electron transport layer to the quantum dot light-emitting layer is reduced; meanwhile, the heat treatment may reduce the amount of the surface hydroxyl groups of the electron transport layer, and as the number of the surface hydroxyl groups of the zinc oxide decreases, the electron and hole injection balance is optimized, the carrier radiation recombination efficiency is improved.


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