The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jan. 22, 2024
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventors:

Jotaro Akiyama, Minami, JP;

Yuki Shibano, Tokyo, JP;

Kento Kaneko, Showa-machi, JP;

Daishi Arimatsu, Yamanashi-ken, JP;

Troy Chase, San Jose, CA (US);

Assignee:

InvenSense, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H04R 1/08 (2006.01); H10F 99/00 (2025.01);
U.S. Cl.
CPC ...
H10F 99/00 (2025.01); H04R 1/08 (2013.01); H04R 2201/003 (2013.01); H04R 2307/023 (2013.01);
Abstract

A sensing device is formed on a first side of a wafer device, forming a cavity between sensing device and the wafer device. An opening of the cavity faces away from the sensing device, positioned on a second side of the wafer device (positioned opposite to the first side). A hydrophobic layer is formed on the second side of the wafer device, on the cavity, on an interior and on an exterior of the sensing device. A mask is formed on the hydrophobic layer on the second side. The mask is perforated that maintains at least a portion of the hydrophobic layer covering the second side of the wafer device exposed. Light is applied to the second side of the wafer device that removes the at least the portion of the hydrophobic layer covering the second side of the wafer device that is exposed. The mask is removed.


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