The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2026

Filed:

Sep. 30, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taekyung Yoon, Hwaseong-si, KR;

Youngjun Kim, Suwon-si, KR;

Hunyoung Bark, Suwon-si, KR;

Eun-Ok Lee, Suwon-si, KR;

Jaejin Lee, Goyang-si, KR;

Dongju Chang, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., SUWON-SI, GYEONGGI-DO, KR;

Int. Cl.
CPC ...
U.S. Cl.
CPC ...
H10B 12/34 ; H10B 12/315 ; H10D 64/01 ; H10W 20/056 ; H10B 12/053 ; H10B 12/488 ; H10D 64/667 ; H10D 30/60 ; H10D 64/513 ; H10D 64/027 ; H10D 64/512 ; H10D 64/01318 ; H10D 64/01338 ; H10P 72/0432 ; H10W 20/048 ; H10W 20/074 ; H10P 50/00 ; H10D 64/0113 ;

Find Patent Forward Citations

Yoon, Taekyung. (2026). Semiconductor device including gate lines with a conductive layer having less nitrogen than an interface layer and method of fabricating the same (U.S. Patent No. 12713882). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12713882

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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