The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jan. 30, 2024
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Dominic Raithel, Lappersdorf, DE;

Adrian Lis, Regensburg, DE;

Thomas Schmid, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 70/40 (2026.01); H10W 70/60 (2026.01); H10W 70/65 (2026.01);
U.S. Cl.
CPC ...
H10W 90/811 (2026.01); H10W 70/427 (2026.01); H10W 70/429 (2026.01); H10W 70/451 (2026.01); H10W 70/481 (2026.01); H10W 70/611 (2026.01); H10W 70/65 (2026.01); H10W 90/00 (2026.01); H10W 90/701 (2026.01);
Abstract

A power module includes: a first substrate comprising a patterned first metallization; a second substrate comprising a patterned second metallization that faces the patterned first metallization; a first plurality of vertical power transistor dies having a drain pad attached to a first part of the patterned first metallization and a source pad electrically connected to a first part of the patterned second metallization; a second plurality of vertical power transistor dies having a drain pad attached to a second part of the patterned first metallization and a source pad electrically connected to a second part of the patterned second metallization; and a multi-level lead frame between the first substrate and the second substrate and attached to each of the first part of the patterned first metallization, the first part of the patterned second metallization, the second part of the patterned first metallization, and the second part of the patterned second metallization.


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