The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Sep. 20, 2023
Applicant:

Monolithic Power Systems, Inc., Kirkland, WA (US);

Inventors:

PO-Hsien Huang, New Taipei City, TW;

Yu-Huei Lee, New Taipei City, TW;

Hsin-Hung Lin, New Taipei City, TW;

Chun-Yuan Shih, New Taipei City, TW;

Lien-Chieh Yu, New Taipei City, TW;

Assignee:

Monolithic Power Systems, Inc., Kirkland, WA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 72/00 (2026.01);
U.S. Cl.
CPC ...
H10W 72/00 (2026.01);
Abstract

A semiconductor device is disclosed herein. The semiconductor device includes a routing structure. The routing structure has an intermediate conductive routing layer. The intermediate conductive routing layer includes a first mesh conductive layer formed in a predetermined second region of the semiconductor device and a second mesh conductive layer formed in a predetermined first region of the semiconductor device. The first mesh conductive layer and the second mesh conductive layer are electrically isolated from each other. The intermediate conductive routing layer further includes multiple first conductive islands formed in the predetermined first region and multiple second conductive islands formed in the predetermined second region.


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