The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Oct. 18, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jang Ho Lee, Suwon-si, KR;

Woo Kyung You, Suwon-si, KR;

Jong Min Baek, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10W 20/00 (2026.01); H10W 20/42 (2026.01); H10W 20/45 (2026.01); H10W 20/47 (2026.01);
U.S. Cl.
CPC ...
H10W 20/075 (2026.01); H10W 20/033 (2026.01); H10W 20/0698 (2026.01); H10W 20/077 (2026.01); H10W 20/089 (2026.01); H10W 20/42 (2026.01); H10W 20/425 (2026.01); H10W 20/435 (2026.01); H10W 20/455 (2026.01); H10W 20/47 (2026.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a first interlayer insulating layer, a lower wiring disposed inside the first interlayer insulating layer, an etching stop layer which includes first to third layers sequentially stacked on the first interlayer insulating layer, a second interlayer insulating layer disposed on the etching stop layer, and a via which penetrates the second interlayer insulating layer and the etching stop layer, the via is connected to the lower wiring, the via includes a first side wall that is in contact with the second layer, and a second side wall that is in contact with the second interlayer insulating layer, the via includes a first protrusion protruding in a horizontal direction from the first side wall inside the first layer, and a second protrusion protruding in the horizontal direction from the first side wall inside the third layer.


Find Patent Forward Citations

Lee, Jang. (2026). Semiconductor device (U.S. Patent No. 12707945). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12707945

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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