The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Nov. 04, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jeehoon Kim, Yongin-si, KR;

Donghan Kang, Yongin-si, KR;

Shinhyuk Yang, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1216 (2023.02); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/443 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01);
Abstract

A display apparatus includes: a transistor; a storage capacitor connected to the transistor; and a light-emitting diode electrically connected to the transistor and the storage capacitor, wherein the transistor includes: a gate electrode on a substrate and having a first sub-layer and a second sub-layer on the first sub-layer; and a semiconductor layer having a channel area, a first low-resistance area, and a second low-resistance area, wherein the channel area overlaps the gate electrode, and the first and second low-resistance areas are on both sides of the channel area, a width of the first sub-layer is greater than a width of the second sub-layer, the channel area is arranged along a side surface of the second sub-layer, the storage capacitor includes a first capacitor electrode and a second capacitor electrode, and the first capacitor electrode is on a same layer and includes a same material as the gate electrode.


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