The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jan. 20, 2021
Applicant:
Hamamatsu Photonics K.k., Hamamatsu, JP;
Inventors:
Makoto Kono, Hamamatsu, JP;
Yoshiyuki Suzuki, Hamamatsu, JP;
Keiichi Ota, Hamamatsu, JP;
Shinya Ito, Hamamatsu, JP;
Ryo Takiguchi, Hamamatsu, JP;
Assignee:
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/10 (2025.01); H10F 39/12 (2025.01);
U.S. Cl.
CPC ...
H10F 39/805 (2025.01); H10F 39/103 (2025.01); H10F 39/107 (2025.01); H10F 39/12 (2025.01); H10F 39/8033 (2025.01); H10F 39/804 (2025.01); H10F 39/806 (2025.01);
Abstract
A solid-state imaging device includes a semiconductor substrate having a main surface provided with a plurality of light sensitive regions and an insulating film provided on the main surface of the semiconductor substrate. A plurality of uneven portions are formed on a surface (main surface) on the side opposite to the main surface of the semiconductor substrate in the insulating film and a plurality of height differences of the uneven portions exist in the light sensitive region.