The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Mar. 15, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Koichi Baba, Kanagawa, JP;

Taiichiro Watanabe, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H04N 25/77 (2023.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8037 (2025.01); H04N 25/77 (2023.01); H10F 39/802 (2025.01); H10F 39/18 (2025.01);
Abstract

A photodetection that alleviates restrictions on a pixel layout in each pixel and capable of being miniaturized is provided. A photodetection device as provided includes a first substrate including a first semiconductor layer with a first surface and a second surface on a side opposite to the first surface, first and second charge accumulation sections provided on the first surface side, a first photoelectric conversion section in the first semiconductor layer, and first and second voltage application sections that apply a voltage to the first semiconductor layer between the first and second charge accumulation sections and the first photoelectric conversion section, and a second substrate including a second semiconductor layer with a third surface and a fourth surface on a side opposite to the third surface and is bonded to the first substrate, and a first pixel transistor on the third or fourth surface that outputs a pixel signal.


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