The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Sep. 28, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sanghyuck Moon, Suwon-si, KR;

Jueun Park, Suwon-si, KR;

Hyuncheol Kim, Suwon-si, KR;

Jungbin Yun, Suwon-si, KR;

Seungjoon Lee, Suwon-si, KR;

Taesub Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8033 (2025.01); H10F 39/014 (2025.01); H10F 39/182 (2025.01);
Abstract

An image sensor including a substrate, at least one transfer gate on a top surface of the substrate, a floating diffusion region located in the substrate and disposed apart from the at least one transfer gate in a first direction, the first direction being parallel to the top surface of the substrate, an intrinsic semiconductor region located in the substrate and disposed between the at least one transfer gate and the floating diffusion region in the first direction, and a photoelectric conversion region located in the substrate and disposed apart from the floating diffusion region in a second direction, wherein the second direction is perpendicular to the first direction, and wherein the intrinsic semiconductor region is an undoped region.


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